Studies on the nature of band-to-band tunneling (BTBT) transport in reverse-biased, silicon Esaki junctions have mainly considered the properties of bulk silicon. In such studies, the effect of local dopant-atom fluctuations has been ignored, as dimensionality effects are assumed to be minimal. In this work, the impact of the localized random dopant fluctuation (RDF) effect is presented in reverse-biased Esaki junctions, observed as inflections of the BTBT current. © 2025 Japan Society of Applied Physics.